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STTA3006CW View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
STTA3006CW
ST-Microelectronics
STMicroelectronics ST-Microelectronics
STTA3006CW Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
STTA3006CW/CP
THERMAL AND POWER DATA
Symbol
Rth(j-c)
P1
Pmax
Parameter
Junction to case
Conduction power dissipation
Total power dissipation
Pmax = P1 + P3 (P3 = 10% P1)
Test conditions
Per diode
Total
Coupling
Per diode
IF(AV) = 30A δ =0.5
Tc= 110°C
Per diode
Tc=105°C
Value
1.9
1.0
0.1
20.5
Unit
°C/W
W
22.5
W
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol
Parameter
Test conditions
Min
VF *
Forward voltage drop
IF =15A Tj = 25°C
Tj = 125°C
IR **
Reverse leakage current VR =0.8 x Tj = 25°C
VRRM
Tj = 125°C
Vto
Threshold voltage
Ip < 3.IAV Tj = 125°C
rd
Dynamic resistance
Test pulse :
* tp = 380 µs, δ < 2%
** tp = 5 ms, δ < 2%
To evaluate the maximum conduction losses use the following equation :
P = Vto x IF(AV) + rd x IF2(RMS)
DYNAMIC ELECTRICAL CHARACTERISTICS (per diode)
TURN-OFF SWITCHING
Symbol
Parameter
Test conditions
Min
trr
Reverse
Tj = 25°C
recovery time IF = 0.5 A IR = 1A Irr = 0.25A
IF = 1A dIF/dt =-50A/µs VR = 30V
IRM
Maximum
Tj = 125°C VR = 400V IF = 15A
reverse recovery dIF/dt = -120 A/µs
current
dIF/dt = -500 A/µs
S factor
Softness factor Tj = 125°C VR = 400V IF = 15A
dIF/dt = -500 A/µs
Typ
1.3
2
Typ
35
17.5
0.5
Max
1.8
1.6
100
5
1.06
177
Max
65
12.5
Unit
V
V
µA
mA
V
m
Unit
ns
A
/
TURN-ON SWITCHING
Symbol
tfr
Parameter
Forward
recovery time
VFp
Peak forward
voltage
Test conditions
Tj = 25°C
IF = 15A, dIF/dt = 120 A/µs
measured at, 1.1 × VFmax
Tj = 25°C
IF = 15A, dIF/dt = 120 A/µs
Min Typ Max Unit
ns
500
V
9
2/8

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