STGW20NB60K View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STGW20NB60K Datasheet PDF : 8 Pages
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STGW20NB60K
THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max
Rthj-amb Thermal Resistance Junction-ambient Max
Rthc-h Thermal Resistance Case-heatsink Typ
0.83
°C/W
62.5
°C/W
0.5
°C/W
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
VBR(CES)
Collectro-Emitter Breakdown
Voltage
IC = 250 µA, VGE = 0
600
V
ICES
Collector cut-off
(VGE = 0)
VCE = Max Rating, TC = 25 °C
VCE = Max Rating, TC = 125 °C
10
µA
100
µA
IGES
Gate-Emitter Leakage
Current (VCE = 0)
VGE = ±20V , VCE = 0
±100
nA
ON (1)
Symbol
VGE(th)
VCE(sat)
Parameter
Gate Threshold Voltage
Collector-Emitter Saturation
Voltage
Test Conditions
VCE = VGE, IC = 250µA
VGE = 15V, IC = 20 A
VGE = 15V, IC = 20 A, Tj =125°C
Min.
5
Typ.
2.3
1.9
Max.
7
2.8
Unit
V
V
V
DYNAMIC
Symbol
gfs
Cies
Coes
Cres
Qg
Qge
Qgc
tscw
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Short Circuit Withstand Time
Test Conditions
VCE = 25 V , IC =20 A
VCE = 25V, f = 1 MHz, VGE = 0
VCE = 480V, IC = 20 A,
VGE = 15V
Vce = 0.5 BVces , VGE = 15 V,
Tj = 125°C , RG = 10 Ω
Min.
10
Typ.
8
1300
200
30
90
T.B.D.
T.B.D.
Max.
Unit
S
pF
pF
pF
nC
nC
nC
µs
SWITCHING ON
Symbol
Parameter
td(on)
Turn-on Delay Time
tr
Rise Time
(di/dt)on Turn-on Current Slope
Eon
Turn-on Switching Losses
Test Conditions
VCC = 480 V, IC = 20 A
RG = 10Ω , VGE = 15 V
VCC= 480 V, IC = 20 A RG=10Ω
VGE = 15 V,Tj = 125°C
Min.
Typ.
20
70
350
300
Max.
Unit
ns
ns
A/µs
µJ
2/8
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