STZT2222 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STZT2222 Datasheet PDF : 5 Pages
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STZT2222/STZT2222A
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
hfe ∗∗ Small Signal Current
Gain
IC = 1 mA VCE = 10 V f = 1 KHz
IC = 10 mA VCE = 10 V f = 1 KHz
hie ∗∗ Input Impedance
IC = 1 mA VCE = 10 V f = 1 KHz
IC = 10 mA VCE = 10 V f = 1 KHz
hre ∗∗ Reverse Voltage Ratio IC = 1 mA VCE = 10 V f = 1 KHz
IC = 10 mA VCE = 10 V f = 1 KHz
hoe ∗∗ Output Impedance
IC = 1 mA VCE = 10 V f = 1 KHz
IC = 10 mA VCE = 10 V f = 1 KHz
fT
Transition Frequency IC = 10 mA VCE = 10 V f = 100 MHz
for STZT2222
for STZT2222A
CCBO
Collector-Base
Capacitance
IE = 0
VCB = 10 V f = 1 MHz
CEBO
Emitter-Base
Capacitance
IC = 0
VEB = 0.5 V
for STZT2222
for STZT2222A
f = 1 MHz
NF Noise Figure
td
Delay Time
tr
Rise Time
f = 1 KHz ∆F = 200 Hz RG = 1KΩ
IC = 0.1 mA VCE = 10 V
IC = 150 mA IC1 = 15 mA
VBE = -0.5 V
ts
Storage Time
tf
Fall Time
IC = 150 mA
IB2 = 15 mA
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1.5 %
∗∗ Only for STZT2222A
IC1 = 15 mA
Min.
50
75
2
0.25
5
25
250
300
Typ.
Max.
300
375
8
1.25
8
4
35
375
8
30
25
4
10
25
225
60
Unit
KΩ
10-4
S
MHz
MHz
pF
pF
pF
dB
ns
ns
ns
ns
3/5
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