DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

STTH3R02AFY View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
STTH3R02AFY
ST-Microelectronics
STMicroelectronics ST-Microelectronics
STTH3R02AFY Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
STTH3R02-Y
Characteristics
Table 5. Dynamic electrical characteristics
Symbol
Parameter
Tests conditions
trr
Reverse recovery time
Tj = 25 °C
IF = 1 A, dIF/dt = -100 A/µs,
VR = 30 V
IF = 1 A, dIF/dt = 50 A/µs,
VR = 30 V
Tj = 125 °C
IF = 3 A, dIF/dt = 200 A/µs,
VR = 160 V
QRR
IRM
Reverse recovery charge
Reverse recovery current
Tj = 125 °C
IF = 3 A, dIF/dt = -200 A/µs,
VR = 160 V
Min. Typ. Max. Unit
16 21
23
ns
24
50
nC
3.5
A
Figure 1. Average forward power dissipation
versus average forward current
3) $9 : 


į  į  į  į  į 




7

į WS7
WS
,) $9 $









Figure 2. Forward voltage drop versus forward
current (typical values)
 ,) $ 



7  ƒ&
M
7  ƒ&
M

9) 9
        
Figure 3. Forward voltage drop versus forward
current (maximum values)
 ,) $ 


7  ƒ&
M
7  ƒ&
M


9) 9
         
Figure 4. Relative variation of thermal
impedance junction to lead versus pulse
duration
=WK MO 5WK MO 








 6LQJOHSXOVH


(
(
(
(
W3 V
( (
DocID027545 Rev 1
3/8
8

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]