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STTA312B View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
STTA312B Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
STTA312B
THERMAL AND POWER DATA
Symbol
Rth (j-c)
P1
Pmax
Parameter
Junction to case thermal resistance
Conduction power dissipation
Total power dissipation
Pmax = P1 + P3
(P3 = 10% P1)
Tests conditions
IF(AV) = 3A, δ = 0.5
Tc = 80°C
Tc = 76°C
Value
6.5
6.7
7.5
Unit
°C/W
W
W
STATIC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
VF ** Forward voltage drop
IR * Reverse leakage current
Vto
rd
Test pulses :
Threshold voltage
Dynamic resistance
* tp = 380 µs, δ < 2%
** tp = 5 ms , δ < 2%
Tests conditions
IF = 3 A
IF = 3 A
Tj = 25°C
Tj = 125°C
VR = 0.8
X VRRM
Tj = 25°C
Tj = 125°C
Ip < 3.IAV Tj = 125°C
Min.
Typ.
1.15
150
Max.
1.8
1.7
20
400
1.15
185
Unit
V
µA
µA
V
m
To evaluatethe maximum conduction losses use the following equation :
P = Vto x IF(AV) + rd x IF2(RMS)
DYNAMIC ELECTRICAL CHARACTERISTICS
TURN-OFF SWITCHING
Symbol
trr
Parameter
IRM
Maximum
recovery current
S factor Softness factor
Tj = 25°C
Tj = 125°C
Tj = 125°C
Test conditions
IF= 0.5A IR=1A Irr= 0.25A
IF= 1A dIF/dt= 50A/µs
VR= 30V
IF= 3A VR= 600V
dIF/dt = -16A/µs
dIF/dt = -50A/µs
VR= 600V IF= 3A
dIF/dt = -50A/µs
Min. Typ. Max. Unit
65
ns
115
A
3.6
6.0
1.2
-
TURN-ON SWITCHING
Symbol
tfr
VFP
Parameter
Forward recovery
time
Peak forward voltage
Test conditions
Tj = 25°C
IF=3A dIF/dt = 16A/µs
Measured at 1.1 x VFmax
Min. Typ. Max. Unit
900 ns
35
V
2/8

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