UPA836TD View Datasheet(PDF) - NEC => Renesas Technology

Part Name

Description

Manufacturer

UPA836TD

NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN LEAD-LESS MINIMOLD

NEC => Renesas Technology 

DATA SHEET

NPN SILICON RF TWIN TRANSISTOR

µPA836TD

NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS)

IN A 6-PIN LEAD-LESS MINIMOLD

FEATURES

• Low voltage operation

• 2 different built-in transistors (2SC5435, 2SC5437)

Q1: Built-in low noise, high-gain transistor

NF = 1.5 dB TYP. @ VCE = 3 V, IC = 3 mA, f = 2 GHz

fT = 12.0 GHz TYP., S21e2 = 8.5 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz

Q2: Built-in low noise transistor

NF = 1.5 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 2 GHz

NF = 1.7 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz

• 6-pin lead-less minimold package

BUILT-IN TRANSISTORS

3-pin thin-type ultra super minimold part No.

Q1

2SC5435

Q2

2SC5437

ORDERING INFORMATION

Part Number

µPA836TD

µPA836TD-T3

Quantity

50 pcs (Non reel)

10 kpcs/reel

Supplying Form

• 8 mm wide embossed taping

• Pin 1 (Q1 Collector), Pin 6 (Q1 Base) face the perforation side of the tape

Remark To order evaluation samples, consult your NEC sales representative.

Unit sample quantity is 50 pcs.

Because this product uses high-frequency technology, avoid excessive static electricity, etc.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. P15358EJ1V0DS00 (1st edition)

Date Published March 2001 NS CP(K)

Printed in Japan

©

2001

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