PUMH4 View Datasheet(PDF) - Philips Electronics
Part Name
Description
Manufacturer
PUMH4 Datasheet PDF : 8 Pages
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Philips Semiconductors
NPN resistor-equipped double transistor
Product specification
PUMH4
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
Per transistor
VCBO
VCEO
VEBO
IO
ICM
Ptot
Tstg
Tj
Tamb
collector-base voltage
collector-emitter voltage
emitter-base voltage
output current (DC)
peak collector current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
Per device
Ptot
total power dissipation
open emitter
open base
open collector
Tamb ≤ 25 °C; note 1
Tamb ≤ 25 °C
Note
1. Device mounted on an FR4 printed-circuit board.
MIN.
MAX.
UNIT
−
50
V
−
50
V
−
5
V
−
100
mA
−
100
mA
−
200
mW
−65
+150
°C
−
150
°C
−65
+150
°C
−
300
mW
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-a
thermal resistance from junction to ambient note 1
Note
1. Device mounted on an FR4 printed-circuit board.
VALUE
416
UNIT
K/W
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Per transistor
ICBO
ICEO
IEBO
hFE
VCEsat
R1
collector cut-off current
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation voltage
input resistor
IE = 0; VCB = 50 V
IB = 0; VCE = 30 V
IB = 0; VCE = 30 V; Tj = 150 °C
IC = 0; VEB = 5 V
IC = 1 mA; VCE = 5 V
IC = 5 mA; IB = 0.25 mA
−
−
−
−
−
−
−
−
200 −
−
−
7
10
Cc
collector capacitance
IE = ie = 0; VCB = 10 V; f = 1 MHz −
−
100 nA
1
µA
50
µA
100 nA
−
150 mV
13
kΩ
2.5 pF
1999 May 20
3
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