LH28F008SC View Datasheet(PDF) - Sharp Electronics

Part Name

Description

Manufacturer

LH28F008SC

8M (1M × 8) Flash Memory

Sharp Electronics 

8M (1M × 8) Flash Memory

LH28F008SC

FFFFF

F0004

F0003

RESERVED FOR

FUTURE IMPLEMENTATION

F0002 BLOCK 15 LOCK CONFIGURATION CODE

F0001

F0000

RESERVED FOR

FUTURE IMPLEMENTATION

BLOCK 15

(BLOCKS 2 THROUGH 14)

1FFFF

10004

10003

10002

10001

10000

0FFFF

00004

00003

RESERVED FOR

FUTURE IMPLEMENTATION

BLOCK 1 LOCK CONFIGURATION CODE

RESERVED FOR

FUTURE IMPLEMENTATION

BLOCK 1

RESERVED FOR

FUTURE IMPLEMENTATION

MASTER LOCK CONFIGURATION CODE

00002 BLOCK 0 LOCK CONFIGURATION CODE

00001

DEVICE CODE

00000

MANUFACTURER CODE BLOCK 0

28F008SC-5

Figure 5. Device Identifier Code Memory Map

Write

Writing commands to the CUI enable reading of

device data and identifier codes. They also control

inspection and clearing of the status register. When

VPP = VPPH1/2/3, the CUI additionally controls block era-

sure, byte write, and lock-bit configuration.

The Block Erase command requires appropriate com-

mand data and an address within the block to be erased.

The Byte Write command requires the command and

address of the location to be written. Set Master and

Block Lock-Bit commands require the command and

address within the device (Master Lock) or block within

the device (Block Lock) to be locked. The Clear Block

Lock-Bits command requires the command and address

within the device.

The CUI does not occupy an addressable memory

location. It is written when WE » and CE » are active. The

address and data needed to execute a command are

latched on the rising edge of WE » or CE » (whichever

goes high first). Standard microprocessor write timings

are used. Figures 16 and 17 illustrateWE » and CE » con-

trolled write operations.

COMMAND DEFINITIONS

When the VPP voltage ≤ VPPLK, Read operations

from the status register, identifier codes, or blocks are

enabled. Placing VPPH1/2/3 on VPP enables successful

block erase, byte write and lock-bit configuration

operations.

Device operations are selected by writing specific

commands into the CUI.The Command DefinitionsTable

defines these commands.

Read Array Command

Upon initial device power-up and after exit from deep

power-down mode, the device defaults to read array

mode. This operation is also initiated by writing the Read

Array command. The device remains enabled for reads

until another command is written. Once the internal

WSM has started a block erase, byte write or lock-bit

configuration, the device will not recognize the Read

Array command until the WSM completes its operation

unless the WSM is suspended via an Erase Suspend

or Byte Write Suspend command.The Read Array com-

mand functions independently of the VPP voltage and

RP » can be VIH or VHH.

7

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