LH28F008SC View Datasheet(PDF) - Sharp Electronics
Part Name
Description
Manufacturer
LH28F008SC Datasheet PDF : 38 Pages
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LH28F008SC
8M (1M × 8) Flash Memory
BUS OPERATIONS
MODE
RP »
CE » OE »
WE
ADDRESS
VPP DQ0 - DQ7 RY »/BY » NOTE
Read
VIH or VHH VIL
VIL
VIH
X
X
DOUT
X
1, 2, 3
Output Disable
VIH or VHH VIL
VIH
VIH
X
X
High-Z
X
3
Standby
VIH or VHH VIH
X
X
X
X
High-Z
X
3
Deep Power Down
VIL
X
X
X
X
X
High-Z
VOH
4
Read Identifier Codes VIH or VHH VIL
VIL
VIH See Figure 5 X
Note 5
VOH
Write
VIH or VHH VIL
VIH
VIL
X
X
DIN
X
3, 6, 7
NOTES:
1. Refer to DC Characteristics. When VPP ≤ VPPLK, memory contents can be read, but not altered.
2. X can be VIL or VIH for control pins and addresses, and VPPLK or VPPH1/2/3 for VPP. See DC Characteristics for
VPPLK and VPPH1/2/3 voltages.
3. RY »/BY » is VOL when the WSM is executing internal block erase, byte write, or lock-bit configuration algorithms. It is VOH during when
the WSM is not busy, in block erase suspend mode (with byte write inactive), byte write suspend mode, or deep power-down mode.
4. RP » at GND ± 0.2 V ensures the lowest deep power-down current.
5. See Read Identifier Codes Command Section for read identifier code data.
6. Command writes involving block erase, write, or lock-bit configuration are reliably executed when VPP = VPPH1/2/3 and VCC = VCC1/2/3.
Block erase, byte write, or lock-bit configuration with VIH < RP » < VHH produce spurious results and should not be attempted.
7. Refer to Command Definitions Table for valid DIN during a write operation.
8
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