DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

M41T256YMT7 View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
M41T256YMT7
ST-Microelectronics
STMicroelectronics ST-Microelectronics
M41T256YMT7 Datasheet PDF : 27 Pages
First Prev 11 12 13 14 15 16 17 18 19 20 Next Last
M41T256Y
MAXIMUM RATING
Stressing the device above the rating listed in the
“Absolute Maximum Ratings” table may cause
permanent damage to the device. These are
stress ratings only and operation of the device at
these or any other conditions above those indicat-
ed in the Operating sections of this specification is
not implied. Exposure to Absolute Maximum Rat-
ing conditions for extended periods may affect de-
vice reliability. Refer also to the
STMicroelectronics SURE Program and other rel-
evant quality documents.
Table 5. Absolute Maximum Ratings
Symbol
Parameter
Value
Unit
TSTG
Storage Temperature (VCC Off, Oscillator Off)
SNAPHAT®
–40 to 85
°C
SOIC
–55 to 125
°C
TSLD(1) Lead Solder Temperature for 10 seconds
260
°C
VIO
Input or Output Voltages
–0.3 to VCC + 0.3 V
VCC
Supply Voltage
–0.3 to 7.0
V
IO
Output Current
20
mA
PD
Power Dissipation
1
W
Note: 1. For SO package, standard (SnPb) lead finish: Reflow at peak temperature of 225°C (total thermal budget not to exceed 180°C for
between 90 to 150 seconds).
2. For SO package, Lead-free (Pb-free) lead finish: Reflow at peak temperature of 260°C (total thermal budget not to exceed 245°C
for greater than 30 seconds).
CAUTION: Negative undershoots below –0.3V are not allowed on any pin while in the Battery Back-up mode.
CAUTION: Do NOT wave solder SOIC to avoid damaging SNAPHAT sockets.
18/27

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]