isc Silicon NPN RF Transistor
INCHANGE Semiconductor
ISC1862
DESCRIPTION
·Collector Current :IC= 100mA
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 12V(Min)
·High gain:
︱ S21e ︱ 2 = 11 dB (typical) ( IC=20mA,f=1GHz)
·Gain bandwidth product:
fT = 7 GHZ (typical) (IC=20mA)
APPLICATIONS
·Designed for VHF, UHF and CATV high frequency
wideband low noise amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
20
V
VCEO
Collector-Emitter Voltage
12
V
VEBO
Emitter-Base Voltage
3.0
V
IC
Collector Current-Continuous
100
mA
PC
Collector Power Dissipation
200
mW
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-65~150
℃
isc website:www.iscsemi.com
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