MBR10100 View Datasheet(PDF) - Shanghai Leiditech Electronic Technology Co., Ltd
Part Name
Description
Manufacturer
MBR10100 Datasheet PDF : 3 Pages
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MBR(F,B)1090 & MBR(F,B)10100
High-Voltage Schottky Rectifier
FEATURES
• Trench MOS Schottky technology
• Lower power losses, high efficiency
• Low forward voltage drop
• High forward surge capability
• High frequency operation
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode
power supplies, freewheeling diodes, dc-to-dc
converters or polarity protection application.
TO-252-2L
K
2
1
MBRB1090
MBRB10100
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF
TJ max.
10 A
90 V, 100 V
150 A
0.65 V
150 °C
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
Maximum average forward rectified current at TC = 133 °C
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
VRRM
VRWM
VDC
IF(AV)
IFSM
Peak repetitive reverse current at tp = 2 µs, 1 kHz
Voltage rate of change (rated VR)
Operating junction and storage temperature range
Isolation voltage (ITO-220AC only)
From terminal to heatsink t = 1 min
IRRM
dV/dt
TJ, TSTG
VAC
MBR1090
90
90
90
MBR10100
100
100
100
10
150
0.5
10 000
- 65 to + 150
1500
UNIT
V
V
V
A
A
A
V/µs
°C
V
Rev : 01.06.2015
1/3
www.leiditech.com
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