S2409 View Datasheet(PDF) - ROHM Semiconductor
Part Name
Description
Manufacturer
S2409 Datasheet PDF : 13 Pages
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S2409
lElectrical characteristic curves
Datasheet
Fig.12 Typical Capacitance
vs. Drain - Source Voltage
10000
Ciss
1000
100
Coss
Crss
10
Ta = 25ºC
f = 1MHz
VGS = 0V
1
0.1
1
10
100
1000
Drain - Source Voltage : VDS [V]
Fig.13 Coss Stored Energy
30
Ta = 25ºC
25
20
15
10
5
0
0
200
400
600
800
Drain - Source Voltage : VDS [V]
Fig.14 Switching Characteristics
10000
tf
1000
Ta = 25ºC
VDD = 500V
VGS = 18V
RG = 0W
Pulsed
100
td(off)
10
tr
td(on)
Fig.15 Dynamic Input Characteristics
20
Ta = 25ºC
VDD = 500V
15
ID = 13A
Pulsed
10
5
1
0.1
1
10
100
Drain Current : ID [A]
0
0 20 40 60 80 100 120
Total Gate Charge : Qg [nC]
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8/11
2017.01 - Rev.A
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