BC847S View Datasheet(PDF) - Shenzhen Jin Yu Semiconductor Co., Ltd.
Part Name
Description
Manufacturer
BC847S Datasheet PDF : 2 Pages
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Multi-chip transistor (NPN)
APPLICATION
This device is designed for general purpose amplifier applications
Marking :1C
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
VCBO
Collector-Base Voltage
50
VCEO
Collector-Emitter Voltage
45
VEBO
Emitter-Base Voltage
6
IC
Collector Current-Continuous
200
PD
Power Dissipation
200
RθJA
Thermal Resistance. Junction to Ambient
625
Tj
Junction Temperature
150
Tstg
Storage Temperature Range
-55~+150
Units
V
mA
mW
℃/W
℃
BC847S
SOT-363
C1
B2
E2
E1
B1
C2
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol Test conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
V(BR)CBO IC=10µA,IE=0
V(BR)CEO IC=1mA,IB=0
V(BR)EBO IE=10µA,IC=0
Collector cut-off current
ICBO
VCB=30V,IE=0
Emitter cut-off current
IEBO
VEB =4V , IC=0
DC current gain*
hFE
VCE=5V,IC=2mA
Collector-emitter saturation voltage
VCE(sat)(1) IC=10mA,IB=0.5mA
VCE(sat)(2) IC=100mA,IB=5mA
Base-emitter voltage
VBE(1)
VBE(2)
VCE=5V,IC=2mA
VCE=5V,IC=10mA
Transition frequency
fT
VCE=5V,IC=20mA ,f=100MHz
Collector output capacitance
Cob
*pulse test: Pulse Width ≤300μs, Duty Cycle≤ 2.0%.
VCB=10V,IE=0,f=1MHz
Min
Typ
Max Unit
50
V
45
V
6
V
15
nA
15
110
630
0.25
V
0.65
V
0.58
0.7
V
0.77
V
200
MHz
2
pF
1
JinYu
semiconductor
www.htsemi.com
Date:2011/ 05
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