SI4190DY-T1-GE3 View Datasheet(PDF) - VBsemi Electronics Co.,Ltd
Part Name
Description
Manufacturer
SI4190DY-T1-GE3 Datasheet PDF : 9 Pages
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SI4190DY-T1-GE3
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
70
20
VGS = 10 V thru 5 V
56
16
www.VBsemi.tw
42
28
14
0
0
0.0090
0.0084
0.0078
0.0072
VGS = 4 V
VGS = 3 V
1
2
3
4
5
VDS - Drain-to-Source Voltage (V)
Output Characteristics
VGS = 6 V
VGS = 7.5 V
VGS = 10 V
12
8
4
0
0.0
TC = 25 °C
TC = 125 °C
TC = - 55 °C
1.4
2.8
4.2
5.6
7.0
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
3200
Ciss
2560
1920
Coss
1280
0.0066
0.0060
0
14
28
42
56
70
ID - Drain Current (A)
On-Resistance vs. Drain Current
10
ID = 10 A
8
VDS = 50 V
6
VDS = 25 V
4
VDS = 75 V
640
Crss
0
0
20
40
60
80
100
VDS - Drain-to-Source Voltage (V)
Capacitance
2.0
ID = 15 A
1.7
VGS = 10 V
1.4
VGS = 6 V
1.1
2
0.8
0
0
10
20
30
40
50
Qg - Total Gate Charge (nC)
Gate Charge
0.5
- 50 - 25 0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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