SIHFBC30AL-GE3 View Datasheet(PDF) - Vishay Semiconductors
Part Name
Description
Manufacturer
SIHFBC30AL-GE3 Datasheet PDF : 12 Pages
| |||
IRFBC30AS, SiHFBC30AS, IRFBC30AL, SiHFBC30AL
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient (PCB
Mounted, steady-state)a
RthJA
Maximum Junction-to-Case (Drain)
RthJC
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
TYP.
-
-
MAX.
40
1.7
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
VDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0, ID = 250 μA
Reference to 25 °C, ID = 1 mAd
VDS = VGS, ID = 250 μA
VGS = ± 30 V
VDS = 600 V, VGS = 0 V
VDS = 480 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 2.2 Ab
VDS = 50 V, ID = 2.2 A
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Output Capacitance
Coss
Effective Output Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Coss eff.
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
VGS = 0 V
VDS = 1.0 V, f = 1.0 MHz
VDS = 480 V, f = 1.0 MHz
VDS = 0 V to 480 Vc
VGS = 10 V
ID = 3.6 A, VDS = 480 V,
see fig. 6 and 13b
VDD = 300 V, ID = 3.6 A,
Rg = 12 , RD = 82 , see fig. 10b, d
MIN.
600
-
2.0
-
-
-
-
2.1
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP. MAX. UNIT
-
-
V
0.67
-
V/°C
-
4.5
V
-
± 100 nA
-
25
μA
-
250
-
2.2
-
-
S
510
-
70
-
3.5
-
pF
730
-
19
-
31
-
-
23
-
5.4
nC
-
11
9.8
-
13
-
ns
19
-
12
-
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
Pulsed Diode Forward Currenta
integral reverse
ISM
p - n junction diode
D
G
S
-
-
3.6
A
-
-
14
Body Diode Voltage
VSD
TJ = 25 °C, IS = 3.6 A, VGS = 0 Vb
-
-
1.6
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr
-
TJ = 25 °C, IF = 3.6 A, dI/dt = 100 A/μsb,
400
600
ns
Qrr
-
1.1
1.7
μC
Forward Turn-On Time
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80 % VDS.
d. Uses IRFBC30A/SiHFBC30A data and test conditions.
www.vishay.com
2
Document Number: 91109
S11-1052-Rev. C, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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