HM100N02
Description
The HM100N02 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
General Features
● VDS =20V,ID =100A
RDS(ON) <5.5mΩ @ VGS=4.5V
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
Application
● Load switching
● Hard switched and high frequency circuits
● Uninterruptible power supply
Schematic diagram
HM100N02
Marking and pin Assignment
100% UIS TESTED!
100% ∆Vds TESTED!
TO-220 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
HM100N02
HM100N02
TO-220-3L
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
Drain Current-Continuous(TC=100℃)
ID
ID (100℃)
Pulsed Drain Current
IDM
Maximum Power Dissipation
PD
Derating factor
Single pulse avalanche energy (Note 5)
EAS
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
20
±12
100
70
350
60
0.48
200
-55 To 150
Unit
V
V
A
A
A
W
W/℃
mJ
℃
Thermal Characteristic
Thermal Resistance,Junction-to-Case(Note 2)
RθJC
2.1
℃/W