Description
The HM100N03D uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
General Features
● VDS =30V,ID =100A
RDS(ON) <2.5 mΩ @ VGS=10V
RDS(ON) <3.5mΩ @ VGS=4.5V
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
● Special process technology for high ESD capability
Application
● Power switching application
● Hard switched and high frequency circuits
● Uninterruptible power supply
HM100N03D
Schematic diagram
Marking and pin assignment
Package Marking and Ordering Information
Device Marking
HM100N03D
Device
HM100N03D
Device Package
DFN5X6-8L
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Drain-Source Voltage
Parameter
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Continuous(TC=100℃)
Pulsed Drain Current
Maximum Power Dissipation
Derating factor
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
ID (100℃)
IDM
PD
TJ,TSTG
Limit
30
±20
100
70.7
300
65
0.43
-55 To 175
Unit
V
V
A
A
A
W
W/℃
℃