CEU02N7G View Datasheet(PDF) - Chino-Excel Technology
Part Name
Description
Manufacturer
CEU02N7G Datasheet PDF : 4 Pages
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CED02N7G/CEU02N7G
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
700V, 1.6A, RDS(ON) = 6.75Ω @VGS = 10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
D
TO-251 & TO-252 package.
D
G
G
S
G
DS
CEU SERIES
TO-252(D-PAK)
CED SERIES
TO-251(I-PAK)
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
700
Gate-Source Voltage
VGS
±30
Drain Current-Continuous @ TC = 25 C
@ TC = 100 C
ID
1.6
1.1
Drain Current-Pulsed a
IDM
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
PD
6.4
48
0.38
Single Pulsed Avalanche Energy d
Single Pulsed Avalanche Current d
EAS
11.25
IAS
1.5
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
2.6
50
Units
V
V
A
A
A
W
W/ C
mJ
A
C
Units
C/W
C/W
Details are subject to change without notice .
1
Rev 4. 2011.Jan
http://www.cetsemi.com
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