KHB3D0N70F-U View Datasheet(PDF) - VBsemi Electronics Co.,Ltd

Part Name

Description

Manufacturer

KHB3D0N70F-U

N-Channel 700 V (D-S) Power MOSFET

VBsemi Electronics Co.,Ltd 

KHB3D0N70F-U/P

www.VBsemi.tw

100

8

10

TJ = 150 °C

TJ = 25 °C

1

VGS = 0 V

0.1

0.2 0.4 0.6 0.8 1

1.2 1.4 1.6

VSD, Source-Drain Voltage (V)

Fig. 7 - Typical Source-Drain Diode Forward Voltage

6

4

2

0

25

50

75

100

125

150

TC, Case Temperature (°C)

Fig. 9 - Maximum Drain Current vs. Case Temperature

100

Operation in this Area

Limited by RDS(on)

IDM = Limited

10

1

Limited Sby RD * (on)

100 μs

1 ms

0.1

TC = 25 °C

TJ = 150 °C

Single Pulse

0.01

10 ms

BVDSS Limited

1

10

100

1000

VDS, Drain-to-Source Voltage (V)

* VGS > minimum VGS at which RDS(on) is specified

Fig. 8 - Maximum Safe Operating Area

850

825

800

775

750

725

700

675

650

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ, Junction Temperature (°C)

Fig. 10 - Temperature vs. Drain-to-Source Voltage

1

Duty Cycle = 0.5

0.2

0.1

0.1

0.05

0.02

Single Pulse

0.01

0.0001

0.001

0.01

0.1

1

10

Pulse Time (s)

Fig. 11 - Normalized Thermal Transient Impedance, Junction-to-Case

E-mail：China@VBsemi TEL:86-755-83251052

4

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