SIHFS11N50A-GE3 View Datasheet(PDF) - Vishay Semiconductors

Part Name

Description

Manufacturer

SIHFS11N50A-GE3

Power MOSFET

Vishay Semiconductors 

www.vishay.com

Fig. 9 - Maximum Drain Current vs. Case Temperature

IRFS11N50A, SiHFS11N50A

Vishay Siliconix

VDS

VGS

Rg

RD

D.U.T.

10 V

Pulse width ≤ 1 µs

Duty factor ≤ 0.1 %

+- VDD

Fig. 10a - Switching Time Test Circuit

VDS

90 %

10 %

VGS

td(on) tr

td(off) tf

Fig. 10b - Switching Time Waveforms

Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

15 V

VDS

L

Driver

Rg

20 V

tp

D.U.T.

IAS

0.01 Ω

+

- VDAD

Fig. 12a - Unclamped Inductive Test Circuit

VDS

tp

IAS

Fig. 12b - Unclamped Inductive Waveforms

S13-1927-Rev. E, 09-Sep-13

5

Document Number: 91286

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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