ES5ABF View Datasheet(PDF) - Xian Semipower Electronic Technology Co., Ltd.

Part Name

Description

Manufacturer

ES5ABF

Surface Mount Superfast Recovery Rectifier

Xian Semipower Electronic Technology Co., Ltd. 

ES5ABF THRU ES5JBF

Fig.1 Reverse Recovery Time Characteristic And Test Circuit Diagram

50 ohm

Noninductive

10 ohm

Noninductive

trr

+0.5

+

25Vdc

approx

-

1 ohm

NonInductive

D.U.T

PULSE

GENERATOR

Note 2

OSCILLOSCOPE

Note 1

0

-0.25

Note：1.Rise Time = 7ns, max.

Input Impedance = 1megohm,22pF.

2. Ries Time =10ns, max.

Source Impedance = 50 ohms.

Fig.2 Maximum Average Forward Current Rating

6

5

4

3

2

1

Single phase half-wave 60 Hz

resistive or inductive load

0

25 50 75 100 125 150 175

Case Temperature (°C)

Fig.4 Typical Forward Characteristics

10

TJ=25°C

1.0

0.1

0.01

ES5ABF~ES5DBF

ES5EBF/WS5GBF

ES5JBF

0.001

0

0.5

1.0

1.5

2.0

2.5

Instaneous Forward Voltage (V)

Fig.6 Maximum Non-Repetitive Peak

Forward Surage Current

175

ES5ABF~ES5DBF

150

ES5EBF/WS5JBF

125

100

75

50

25

8.3 ms Single Half Sine Wave

(JEDEC Method)

00

1

10

Number of Cycles

100

-1.0

10ns/div

Set time Base for 10ns/div

Fig.3 Typical Reverse Characteristics

300

100

TJ=125°C

10

TJ=75°C

1.0

TJ=25°C

0.1

0

20

40

60

80

100

% of PIV.VOLTS

Fig.5 Typical Junction Capacitance

TJ=25°C

100

10

TJ=25°C

f = 1.0MHz

Vsig = 50mVp-p

1

0.1

1.0

10

Reverse Voltage (V)

100

Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 2016 Rev 1.0

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