3N06L06 View Datasheet(PDF) - VBsemi Electronics Co.,Ltd

Part Name

Description

Manufacturer

3N06L06

N-Channel 60 V (D-S) MOSFET

VBsemi Electronics Co.,Ltd 

3N06L06 TO220

N-Channel 60 V (D-S) MOSFET

PRODUCT SUMMARY

VDS (V)

60

RDS(on) ()

0.005 at VGS = 10 V

0.008 at VGS = 7.5 V

ID (A)a

120

100

FEATURES

• 175 °C Junction Temperature

• TrenchFET® Power MOSFET

• Material categorization:

TO-220AB

D

www.VBsemi.tw

G

GDS

S

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

Parameter

Symbol

Limit

Unit

Gate-Source Voltage

VGS

± 20

V

Continuous Drain Current (TJ = 175 °C)b

TC = 25 °C

TC = 100 °C

ID

120

90

Pulsed Drain Current

IDM

350

A

Continuous Source Current (Diode Conduction)

IS

70a

Avalanche Current

IAS

50

Single Avalanche Energy (Duty Cycle  1 %)

L = 0.1 mH

EAS

125

mJ

Maximum Power Dissipation

TC = 25 °C

TA = 25 °C

PD

136

3b, 8.3b, c

W

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 175

°C

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambienta

Maximum Junction-to-Case

Notes:

a. Package limited.

b. Surface mounted on 1" x 1" FR4 board.

c. t  10 s.

t  10 sec

Steady State

Symbol

RthJA

RthJC

Typical

15

40

0.85

Maximum

18

50

1.1

Unit

°C/W

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