1EDF5673K(2019) View Datasheet(PDF) - Infineon Technologies
Part Name
Description
Manufacturer
1EDF5673K Datasheet PDF : 37 Pages
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GaN EiceDRIVER™ product family
GaN gate driver
Functional description
a resistor Rt1 connected from TNEG to GNDI according to t1 = Rt1 * 1.8 pF. As the main idea is to keep the switch in
a safe "off" state during the switching transient, t1 must be longer than the system dead time td, i.e. the maximum
time between an "off"-command and the subsequent switching transient. The upper limit for t1 obviously is the
minimum "off"-period; thus there is usually sufficient margin in the choice of t1.
However, it should be mentioned that the actual value of t1 can be influenced by the switching transient itself due
to small, but unavoidable coupling capacitances between output and input pins. Even with an optimized PCB
layout, capacitances inside the package may cause a shortening of t1 for the high-side switch in fast-switching
half-bridges to approximately 50% of the static value. But, as the effect is triggered by the transient of the
switching node, the essential requirement, i.e. to apply the negative gate voltage during this transient, is always
met automatically and the described behavior does not cause any adverse effect in the system. Nevertheless, it
is possible to reduce the shortening effect by connecting a capacitance of a few 100 pF in parallel with Rt1.
Final datasheet
11
Rev. 2.10
2019-02-11
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