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1EDF5673K(2019) View Datasheet(PDF) - Infineon Technologies

Part Name
Description
Manufacturer
1EDF5673K
(Rev.:2019)
Infineon
Infineon Technologies Infineon
1EDF5673K Datasheet PDF : 37 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
1EDF5673K, 1EDF5673F, 1EDS5663H
GaN gate driver
Potential applications
• High-voltage AC/DC conversion
• High-voltage DC/DC conversion
in server and telecom SMPS
Isolation and safety approval
• 1EDS5663H with reinforced isolation: certification by VDE, UL, CSA, CQC according to
– DIN V VDE V 0884-10 (2006-12) with VIOTM = 8 kVpk, VIOSM = 6.25 kVpk (tested at 10 kVpk)
– UL1577 (Ed. 5) with VISO = 5.7 kVRMS
– IEC60950 and IEC602386 system standards and corresponding CQC certificates
• 1EDF5673K and 1EDF5673F with functional isolation: production test with 1.5 kV for 10 ms
Product versions
In accordance with the isolation classification for primary and secondary side control, GaN EiceDRIVER™ is
available in different package versions
Table 1
Part
number
GaN EiceDRIVER™ product family overview
Package
Source/sink
Input-to-output isolation
output
Isolation class Rating
resistance
Surge testing
Safety
certification1)
1EDF5673K
1EDF5673F
1EDS5663H
LGA-13
5 x 5 mm
DSO-16
150 mil
DSO-16
300 mil
0.85 Ω / 0.35 Ω functional
0.85 Ω / 0.35 Ω functional
0.85 Ω / 0.35 Ω reinforced
(safe)
1) certification pending
VIO = 1.5 kVDC
n.a
n.a
VIO= 1.5 kVDC
n.a
n.a
VIOTM = 8 kVpk
(VDE0884-10)
VISO = 5.7 kVRMS
(UL1577)
VIOSM >10 kVpk
(IEC60065)
VDE0884-10
UL1577
IEC60950,
62386 (CQC)
Final datasheet
2
Rev. 2.10
2019-02-11

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