DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

4GBJ2002 View Datasheet(PDF) - HY ELECTRONIC CORP.

Part Name
Description
Manufacturer
4GBJ2002
HY
HY ELECTRONIC CORP. HY
4GBJ2002 Datasheet PDF : 3 Pages
1 2 3
Rating and Characteristic Curves
4GBJ20005 THRU 4GBJ2010
Fig. 1 - Forward Current Derating Curve
20
With heatsink
16
12
8
Without heatsink
4
0
0
50
100
150
Case Temperature ()
1000
100
10
1
Fig. 3 - Typical Reverse Characteristics
TJ=150°C
TJ=125°C
TJ=100°C
TJ=75°C
TJ=25°C
0.1
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
300
250
200
150
100
50
0
1
Fig. 2 - Maximum Non-Repetitive Surge Current
8.3mS Single Half-Sine-Wave
(JEDEC METOD)
10
100
Number of Cycles at 60Hz
Fig. 4 - Typical Forward Characteristics
25
Pulse Width 300uS
2%Duty Cycle
10
TJ=100°C
1
0.2
TJ=125°C
TJ=25°
TJ=75°
0.4
0.6
0.8
1
1.2
Instantaneous Forward Voltage (V)
Fig. 5 - Typical Junction Capacitance
100
10
TJ=25°C,f=1MHz
1
1
The curve above is for reference only.
10
Reverse Voltage (V)
100
4GBJ20*-U-00-00
Rev. 11, 18-May-2020

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]