Nonswitching electrical specifications
Table 3. DC characteristics (continued)
Symbol
VOH
IOHT
VOL
IOLT
VIH
VIL
Vhys
|IIn|
|IINTOT|
RPU
RPU4
IIC
C
Descriptions
Min
Typical1 Max
P
Output All I/O pins, except PTA2 5 V, Iload = –5 mA VDD – 0.8
—
—
C
high
voltage
and PTA3, standard-
drive strength
3 V, Iload = –2.5 mA
VDD – 0.8
—
—
P
High current drive pins, 5 V, Iload = –20 mA VDD – 0.8
—
—
C
high-drive strength3
3 V, Iload = –10 mA
VDD – 0.8
—
—
D
Output Max total IOH for all ports
5V
high
current
3V
—
—
–100
—
—
–60
P
Output All I/O pins, standard- 5 V, Iload = 5 mA
—
C
low
voltage
drive strength
3 V, Iload = 2.5 mA
—
P
High current drive pins, 5 V, Iload =20 mA
—
C
high-drive strength3
3 V, Iload = 10 mA
—
D
Output Max total IOL for all ports
5V
—
low
current
3V
—
—
0.8
—
0.8
—
0.8
—
0.8
—
100
—
60
P
Input
All digital inputs
4.5≤VDD<5.5 V
0.65 × VDD
—
—
high
voltage
2.7≤VDD<4.5 V
0.70 × VDD
—
—
P Input low
voltage
All digital inputs
C
Input
hysteresi
s
All digital inputs
4.5≤VDD<5.5 V
—
—
0.35 ×
VDD
2.7≤VDD<4.5 V
—
—
0.30 ×
VDD
—
0.06 × VDD
—
—
P
Input
Per pin (pins in high
VIN = VDD or VSS
—
leakage impedance input mode)
current
0.1
1
C
Total Pins in high impedance VIN = VDD or VSS
—
leakage
input mode
combine
d for all
port pins
—
2
P
Pullup All digital inputs, when
—
resistors enabled (all I/O pins
other than PTA2 and
PTA3)
30.0
—
50.0
P
Pullup PTA2 and PTA3 pins
—
resistors
30.0
—
60.0
D
DC
Single pin limit
VIN < VSS, VIN >
-2
injection
current5,
6, 7
Total MCU limit, includes
sum of all stressed pins
VDD
-5
—
2
—
25
Unit
V
V
V
V
mA
V
V
V
V
mA
V
V
mV
µA
µA
kΩ
kΩ
mA
CIn
C
Input capacitance, all pins
—
VRAM
C
RAM retention voltage
—
—
—
7
pF
2.0
—
—
V
1. Typical values are measured at 25 °C. Characterized, not tested.
2. Maximum power supply VDD ramp-up rate is 70V/ms, characterized on samples of different lots.
KE02 Sub-Family Data Sheet, Rev. 7, 12/2019
8
NXP Semiconductors