SI2333CDS-T1-GE3(2009) View Datasheet(PDF) - Vishay Semiconductors
Part Name
Description
Manufacturer
SI2333CDS-T1-GE3 Datasheet PDF : 9 Pages
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Si2333CDS
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
10
TJ = 150 °C
0.14
ID = 5.1 A
0.12
0.10
1
TJ = 25 °C
0.08
0.1
0.01
TJ = - 55 °C
0.06
TJ = 125 °C
0.04
0.02
TJ = 25 °C
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.00
0
1
2
3
4
5
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
0.4
10
0.3
0.2
0.1
0.0
- 0.1
ID = 250 µA
ID = 1 mA
8
6
4
2
TA = 25 °C
- 0.2
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
0
0.01
0.1
1
10
100
Time (s)
Single Pulse Power
1000
100
Limited by RDS(on)*
10
100 µs
1 ms
1
10 ms
100 ms
0.1
TA = 25 °C
Single Pulse
BVDSS
Limited
1 s, 10 s
100 s, DC
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
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4
Document Number: 68717
S09-2433-Rev. C, 16-Nov-09
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