SI2356DS-T1-GE3 View Datasheet(PDF) - Vishay Semiconductors
Part Name
Description
Manufacturer
SI2356DS-T1-GE3 Datasheet PDF : 10 Pages
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
4.8
Si2356DS
Vishay Siliconix
3.6
2.4
1.2
0
0
25
50
75
100
125
150
TC - Case Temperature (°C)
Current Derating*
2
0.9
0.72
1.5
0.54
1
0.36
0.5
0.18
0
0
25
50
75
100
125
150
TC - Case Temperature (°C)
Power Junction-to-Foot
0
0
25
50
75
100
125
150
TA - Ambient Temperature (°C)
Power Junction-to-Ambient
* The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 62893
For technical questions, contact: pmostechsupport@vishay.com
www.vishay.com
S13-1814-Rev. A, 12-Aug-13
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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