SI2356DS-HF View Datasheet(PDF) - KEXIN Industrial
Part Name
Description
Manufacturer
SI2356DS-HF Datasheet PDF : 5 Pages
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SMD Type
MOSFET
N-Channel MOSFET
SI2356DS-HF (KI2356DS-HF)
■ Electrical Characteristics Ta = 25℃
Parameter
Drain-Source Breakdown Voltage
Symbol
VDSS
Zero Gate Voltage Drain Current
IDSS
Gate-Body Leakage Current
Gate Threshold Voltage
IGSS
VGS(th)
Static Drain-Source On-Resistance
RDS(On)
On State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
ID(ON)
gFS
Ciss
Coss
Crss
Rg
Total Gate Charge
Qg
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
Maximum Body-Diode Continuous Current
Pulse Diode Forward Current (t = 100 μs)
Diode Forward Voltage
Qgs
Qgd
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
trr
Qrr
ta
tb
IS
ISM
VSD
Note.Pulse test; pulse width≤300 μs, duty cycle≤2 %.
Test Conditions
ID=250μA, VGS=0V
VDS=40V, VGS=0V
VDS=40V, VGS=0V, TJ=55℃
VDS=0V, VGS=±12V
VDS=VGS , ID=250μA
VGS=10V, ID=3.2A
VGS=4.5V, ID=3.1A
VGS=2.5V, ID=2A
VGS=10V, VDS≥5V
VDS=15V, ID=3.2A
VGS=0V, VDS=20V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=20V, ID=3.2A
VGS=4.5V, VDS=20V, ID=3.2A
VDD=20 V, RL=7.7Ω
ID=2.6A, VGEN=10V, Rg = 1Ω
VDD=20 V, RL=7.7Ω
ID=2.6A, VGEN=4.5V, Rg = 1Ω
IF= 2.6A, dI/dt= 100A/μs , TJ = 25℃
Tc = 25℃
IS=2.6A,VGS=0V
Min Typ Max Unit
40
V
1
μA
10
±100 nA
0.6
1.5 V
51
54 mΩ
70
10
A
13
S
370
50
pF
17
0.2
1.4 Ω
8.1 13
3.8 5.7
nC
0.72
0.81
6 12
12 20
13 20
6 12
10 20 ns
52 78
18 27
53 80
12 20
5 10 nC
8.5
ns
3.5
1.4
A
20
1.2 V
■ Marking
Marking
E9* F
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