1N5818WS View Datasheet(PDF) - Unspecified

Part Name

Description

Manufacturer

1N5818WS

Schottky Barrier Rectifiers

Unspecified 

Features

 Metal silicon junction, majority carrier conduction

 Guarding for overvoltage protection

 Low power loss, high efficiency

 High current capability

 Low forward voltage drop

 High surge capability

 For use in low voltage, high frequency inverters,

free wheeling, and polarity protection applications

1N5817WS-1N5819WS

Schottky Barrier Rectifiers

SOD-323

2

1

2

1

Marking : 1N5817WS---SJ

1N5818WS---SK

1N5819WS---SL

Absolute Maximum Ratings (Ta=25℃ unless otherwise specified)

Parameter

Symbols 1N5817WS 1N5818WS 1N5819WS Units

Maximum Repetitive Peak Reverse Voltage

Maximum RMS voltage

Maximum DC Blocking Voltage

VRRM

20

30

40

V

VRMS

14

21

28

V

VDC

20

30

40

V

Maximum Average Forward Rectified Current

IF(AV)

1

A

Peak Forward Surge Current, 8.3ms Single Half Sine-

IFSM

9

A

wave Superimposed On Rated Load (JEDEC)

Maximum Instantaneous Forward Voltage at 1 A

at 3 A

0.45

0.55

0.6

VF

V

0.75

0.875

0.9

Maximum Instantaneous Reverse Current at TA = 25°C

IR

Rated DC Reverse Voltage

TA = 100°C

1

mA

10

Typical Junction Capacitance

CJ

110

pF

Storage and Operating Junction Temperature Range

TJ, Tstg

-55 ~ +150

°C

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Revision：1.0 Jun-2018

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