1N5817WS View Datasheet(PDF) - Unspecified
Part Name
Description
Manufacturer
1N5817WS Datasheet PDF : 3 Pages
| |||
SEMICONDUCTOR
TECHNICAL DATA
SCHOTTKY BARRIER RECTIFIERS
FEATURES
• Metal silicon junction, majority carrier conduction
• Guarding for overvoltage protection
• Low power loss, high efficiency
• High current capability
• Low forward voltage drop
• High surge capability
• For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
MECHANICAL DATA
▪Case: SOD-323
▪Terminals: Solderable per MIL-STD-750, Method 2026
▪Approx. Weight: 5.48mg / 0.00019oz
1N5817WS ~ 1N5819WS
PINNING
PIN
DESCRIPTION
1
Cathode
2
Anode
2
1
Top View
Marking Code: 1N5817WS---SJ
1N5818WS---SK
1N5819WS---SL
Simplified outline SOD-323 and symbol
Maximum Ratings and Electrical characteristics
(Ratings at 25 °C ambient temperature unless otherwise specified)
Parameter
Symbols 1N5817WS 1N5818WS 1N5819WS Units
Maximum Repetitive Peak Reverse Voltage
Maximum RMS voltage
Maximum DC Blocking Voltage
VRRM
20
30
40
V
VRMS
14
21
28
V
VDC
20
30
40
V
Maximum Average Forward Rectified Current
I F ( AV )
1
A
Peak Forward Surge Current, 8.3ms Single Half Sine-wave
Superimposed On Rated Load (JEDEC method)
Maximum Instantaneous Forward Voltage
at 1 A
at 3 A
Maximum Instantaneous Reverse Current at TA = 25°C
Rated DC Reverse Voltage
TA = 100°C
Typical Junction Capacitance
Storage and Operating Junction Temperature Range
IFSM
9
A
VF
0.45
0.55
0.6
0.75
0.875
0.9
V
IR
1
10
mA
Cj
110
pF
Tj, Tstg
-55 ~ +150
°C
2018. 08. 29
Revision No : 0
1/3
Share Link: 