1N5818WS View Datasheet(PDF) - Shenzhen Yixinwei Technology Co., Ltd.
Part Name
Description
Manufacturer
1N5818WS Datasheet PDF : 2 Pages
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1N5817WS - 1N5819WS
SURFACE MOUNT SCHOTTKY BARRIER DIODE
Features
• Low Forward Voltage Drop
• Guard Ring Construction for Transient Protection
• Negligible Reverse Recovery Time
• Low Reverse Capacitance
• Ultra-Small Surface Mount Package
• Lead Free/RoHS Compliant (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: SOD-323
• Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Leads: Solderable per MIL-STD-202, Method 208
• Lead Free Plating (Matte Tin Finish annealed over
Alloy 42 leadframe).
• Polarity: Cathode Band
• Type Codes: 1N5819WS S4
1N5818WS S5 or S4
1N5817WS S6 or S5 or S4
• Weight: 0.004 grams (approximate)
SOD-323
Dim Min Max
A
2.30 2.70
H
D
J
B
1.60 1.80
G
A
B
C
1.20 1.40
D
1.05 Typical
E
0.25 0.35
G
0.20 0.40
C
E
H
0.10 0.15
J
0.05 Typical
a
0°
8°
All Dimensions in mm
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current (Note 1)
Non-Repetitive Peak Forward Surge Current
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
@ t ≤ 1.0s
Symbol
VRRM
VRWM
VR
VR(RMS)
IFM
IFSM
Pd
RθJA
Tj, TSTG
1N5819WS
40
28
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Reverse Breakdown Voltage (Note 2)
Symbol Min
Typ
1N5819WS
40
1N5818WS V(BR)R
30
⎯
1N5817WS
20
Forward Voltage Drop
Peak Reverse Current (Note 2)
Total Capacitance
VF
⎯
⎯
1N5819WS
1N5818WS
IR
1N5817WS
⎯
⎯
CT
⎯
28
Reverse Recovery Time
trr
⎯
10
Note: 1. Short duration test pulse used to minimize self-heating effect.
2. No purposefully added lead.
1N5818WS
30
21
350
1.5
200
625
-65 to +125
1N5817WS
20
14
Unit
V
V
mA
A
mW
°C/W
°C
Max
⎯
0.37
0.60
5.0
⎯
⎯
Unit
V
V
µA
pF
ns
Test Conditions
IR = 100µA
IR = 100µA
IR = 100µA
IF = 20mA
IF = 200mA
VR = 30V
VR = 20V
VR = 10V
VR = 0V, f = 1.0MHz
IF = IR = 200mA,
Irr = 0.1 x IR, RL = 100Ω
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