SI2377EDS-T1-GE3 View Datasheet(PDF) - Vishay Semiconductors
Part Name
Description
Manufacturer
SI2377EDS-T1-GE3 Datasheet PDF : 9 Pages
| |||
www.vishay.com
Si2377EDS
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-source breakdown voltage
VDS temperature coefficient
VGS(th) temperature coefficient
Gate-source threshold voltage
Gate-source leakage
Zero gate voltage drain current
On-state drain current a
Drain-source on-state resistance a
Forward transconductance a
Dynamic b
VDS
ΔVDS/TJ
ΔVGS(th)/TJ
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
VGS = 0 V, ID = -250 μA
ID = -250 μA
VDS = VGS, ID = -250 μA
VDS = 0 V, VGS = ± 8 V
VDS = 0 V, VGS = ± 4.5 V
VDS = -20 V, VGS = 0 V
VDS = -20 V, VGS = 0 V, TJ = 55 °C
VDS ≤ -5 V, VGS = -4.5 V
VGS = -4.5 V, ID = -3.2 A
VGS = -2.5 V, ID = -2.8 A
VGS = -1.8 V, ID = -1.5 A
VGS = -1.5 V, ID = -0.5 A
VDS = -10 V, ID = -3.2 A
Total gate charge
Qg
VDS = -10 V, VGS = -8 V, ID = -5.3 A
Gate-source charge
Gate-drain charge
Qgs
VDS = -10 V, VGS = -4.5 V, ID = -5.3 A
Qgd
Gate resistance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on delay time
Rg
td(on)
tr
td(off)
tf
td(on)
f = 1 MHz
VDD = -10 V, RL = 2.3 Ω
ID ≅ -4.3 A, VGEN = -4.5 V, Rg = 1 Ω
Rise time
Turn-off delay time
Fall time
tr
td(off)
tf
VDD = -10 V, RL = 2.3 Ω
ID ≅ -4.3 A, VGEN = -8 V, Rg = 1 Ω
Drain-Source Body Diode Characteristics
Continuous source-drain diode current
IS
TC = 25 °C
Pulse diode forward current
Body diode voltage
ISM
VSD
IS = -3 A, VGS = 0 V
Body diode reverse recovery time
trr
Body diode reverse recovery charge
Qrr
Reverse recovery fall time
ta
Reverse recovery rise time
tb
IF = -3 A, di/dt = 100 A/μs,
TJ = 25 °C
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2%
b. Guaranteed by design, not subject to production testing
MIN.
-20
-
-
-0.4
-
-
-
-
-15
-
-
-
-
-
-
-
-
-
0.4
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
-
-13
2.5
-
-
-
-
-
-
0.050
0.065
0.090
0.110
12
14
7.6
0.8
3.1
2
0.2
1
4
2
0.09
0.4
5.2
2.3
-
-
-0.8
30
20
13
17
MAX. UNIT
-
-
-
-1
±6
± 0.5
-1
-10
-
0.061
0.080
0.110
0.165
-
V
mV/°C
V
μA
A
Ω
S
21
12
nC
-
-
4
kΩ
0.3
1.5
6
3
μs
0.14
0.6
7.8
3.5
-1.5
A
-20
-1.2
V
60
ns
40
nC
-
ns
-
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S10-0542-Rev. A, 08-Mar-10
2
Document Number: 65905
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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