SI2399CDS-T1-GE3 View Datasheet(PDF) - VBsemi Electronics Co.,Ltd
Part Name
Description
Manufacturer
SI2399CDS-T1-GE3 Datasheet PDF : 9 Pages
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Si2399CDS-T1-GE3
P-Channel 30 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) () Typ.
0.046 at VGS = - 10 V
- 30
0.049 at VGS = - 6 V
0.054 at VGS = - 4.5 V
ID (A)a
- 5.6
-5
-4.5
Qg (Typ.)
11.4 nC
TO-236
S
(SOT-23)
FEATURES
• TrenchFET® Power MOSFET
• 100 % Rg Tested
APPLICATIONS
• For Mobile Computing
- Load Switch
- Notebook Adaptor Switch
- DC/DC Converter
G1
S2
3D
Top View
G
D
P-Channel MOSFET
www.VBsemi.tw
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
VDS
VGS
TC = 25 °C
TC = 70 °C
TA = 25 °C
ID
TA = 70 °C
- 30
± 20
- 5.6
- 5.1
- 5.4b,c
- 4.3b,c
Pulsed Drain Current (t = 100 µs)
Continous Source-Drain Diode Current
Maximum Power Dissipation
IDM
TC = 25 °C
TA = 25 °C
IS
TC = 25 °C
TC = 70 °C
TA = 25 °C
PD
TA = 70 °C
- 18
- 2.1
- 1b,c
2.5
1.6
1.25b,c
0.8b,c
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb,d
Maximum Junction-to-Foot (Drain)
t5s
Steady State
Notes:
a. Based on TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 166 °C/W.
Symbol
RthJA
RthJF
Typical
75
40
Maximum
100
50
Unit
V
A
W
°C
Unit
°C/W
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