SI3407DV(2008) View Datasheet(PDF) - Vishay Semiconductors
Part Name
Description
Manufacturer
SI3407DV Datasheet PDF : 7 Pages
| |||
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
25
8
VGS = 5 thru 2.5 V
20
6
15
10
5
0
0
0.06
VGS = 2 V
VGS = 1.5 V
1
2
3
4
5
VDS - Drain-to-Source Voltage (V)
Output Characteristics
4
2
0
0.0
3000
Si3407DV
Vishay Siliconix
TC = 125 °C
TC = 25 °C
0.6
1.2
TC = - 55 °C
1.8
2.4
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.05
0.04
0.03
0.02
VGS = 2.5 V
VGS = 4.5 V
0.01
0
5
10
15
20
25
ID - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
4.5
ID = 7.5 A
3.6
VDS = 10 V
2.7
VDS = 16 V
1.8
0.9
2400
Ciss
1800
1200
600
Coss
Crss
0
0
4
8
12
16
20
VDS - Drain-to-Source Voltage (V)
Capacitance
1.5
ID = 7.5 A
1.3
VGS = 4.5 V, ID = 7.9 A
1.1
VGS = 2.5 V,
ID = 6.4 A
0.9
0.0
0
6
12
18
24
Qg - Total Gate Charge (nC)
Gate Charge
0.7
- 50 - 25 0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 69987
S-80673-Rev. A, 31-Mar-08
www.vishay.com
3
Share Link: 