SI4559ADY View Datasheet(PDF) - Vishay Semiconductors

Part Name

Description

Manufacturer

SI4559ADY

N- and P-Channel 60 V (D-S) MOSFET

Vishay Semiconductors 

www.vishay.com

N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Si4559ADY

Vishay Siliconix

6

5

4

3

2

1

0

25

50

75

100

125

150

TC - Case Temperature (°C)

Current Derating a

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0.0

0

25

50

75

100 125 150

TC - Case Temperature (°C)

Power Derating

100

10

TA =

L . ID

BV - VDD

1

0.000001

0.00001

0.0001

TA - Time In Avalanche (s)

0.001

Single Pulse Avalanche Capability

Note

a. The power dissipation PD is based on TJ max = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper

dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the

package limit

S09-0393-Rev. B, 09-Mar-09

6

Document Number: 73624

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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