SI4559ADY View Datasheet(PDF) - Vishay Semiconductors
Part Name
Description
Manufacturer
SI4559ADY Datasheet PDF : 14 Pages
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www.vishay.com
P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Si4559ADY
Vishay Siliconix
25
25
VGS = 10 V thru 5 V
20
20
15
4V
10
5
3V
0
012 34 56 78
VDS - Drain-to-Source Voltage (V)
Output Characteristics
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
0
VGS = 4.5 V
VGS = 10 V
5
10
15
20
25
ID - Drain Current (A)
On-Resistance vs. Drain Current
15
10
TC = 125 °C
5
25 °C
- 55 °C
0
0
1
2
3
4
5
6
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
1000
800
Ciss
600
400
200
Coss
0 Crss
0
10
20
30
40
50
60
VDS - Drain-to-Source Voltage (V)
Capacitance
10
VDS = 30 V
ID = 3.1 A
8
6
4
2
0
0
3
6
9
12
15
Qg - Total Gate Charge (nC)
Gate Charge
2.2
VGS = 10 V
2.0 ID = 3.1 A
1.8
1.6
1.4
1.2
1.0
0.8
0.6
- 50 - 25
0 25 50 75 100 125 150 175
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
S09-0393-Rev. B, 09-Mar-09
8
Document Number: 73624
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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