SI3457CDV-T1-GE3 View Datasheet(PDF) - VBsemi Electronics Co.,Ltd
Part Name
Description
Manufacturer
SI3457CDV-T1-GE3 Datasheet PDF : 9 Pages
| |||
SI3457CDV-T1-GE3
P-Channel 30-V (D-S) MOSFET
www.VBsemi.tw
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.049 at VGS = - 10 V
- 30
0.054 at VGS = - 4.5 V
ID (A)a
- 4.8
- 4.1
Qg (Typ.)
5.1 nC
3 mm
TSOP-6
Top V iew
1
6
2
5
3
4
2.85 mm
FEATURES
• Halogen-free According to IEC 61249-2-21
Available
• TrenchFET® Power MOSFET
APPLICATIONS
• Load Switch
(4) S
(3) G
(1, 2, 5, 6) D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
TA = 70 °C
Pulsed Drain Current
Continuous Source-Drain Diode Current
IDM
TC = 25 °C
TA = 25 °C
IS
Maximum Power Dissipation
TC = 25 °C
TC = 70 °C
TA = 25 °C
PD
TA = 70 °C
Operating Junction and Storage Temperature Range
TJ, Tstg
Limit
- 30
± 20
- 4.8
- 4.1
- 4.0b, c
- 3.5b, c
- 20
- 2.5
- 1.67b, c
3.0
2.0
2.0b, c
1.3b, c
- 55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
Maximum Junction-to-Foot (Drain)
t≤5s
Steady State
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under Steady State conditions is 110 °C/W.
Symbol
RthJA
RthJF
Typical
55
34
Maximum
62.5
41
Unit
V
A
W
°C
Unit
°C/W
E-mail：China@VBsemi TEL:86-755-83251052
1
Share Link: 