SI3457CDV-T1-GE3 View Datasheet(PDF) - VBsemi Electronics Co.,Ltd

Part Name

Description

Manufacturer

SI3457CDV-T1-GE3

P-Channel 30-V (D-S) MOSFET

VBsemi Electronics Co.,Ltd 

SI3457CDV-T1-GE3

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

100

0.25

0.20

www.VBsemi.tw

ID = 4.1 A

TJ = 150 °C

0.15

10

TJ = 25 °C

0.10

TJ = 125 °C

1

0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

VSD - Source-to-Drain Voltage (V)

Source-Drain Diode Forward Voltage

2.2

ID = 250 µA

2.0

0.05

TJ = 25 °C

0.00

0

2

4

6

8

10

VGS - Gate-to-Source Voltage (V)

On-Resistance vs. Gate-to-Source Voltage

25

20

1.8

15

1.6

10

1.4

5

1.2

- 50 - 25

0 25 50 75 100 125 150

TJ - Temperature (°C)

Threshold Voltage

0

0.001 0.01

0.1

1

10

100

Time (s)

Single Pulse Power

1000

100

Limited by RDS(on)*

10

100 µs

1

1 ms

10 ms

0.1

100 ms

1s, 10 s

0.01

0.1

TA = 25 °C

Single Pulse

1

BVDSS

Limited

10

DC

100

* VGS

VDS - Drain-to-Source Voltage (V)

minimum VGS at which RDS(on) is specified

Safe Operating Area

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4

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