SI3457CDV-T1-GE3 View Datasheet(PDF) - Vishay Semiconductors
Part Name
Description
Manufacturer
SI3457CDV-T1-GE3 Datasheet PDF : 11 Pages
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www.vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Si3457CDV
Vishay Siliconix
20
5
VGS = 10 V thru 5 V
16
4
TC = - 55 °C
12
3
VGS = 4 V
TC = 25 °C
8
2
4
VGS = 3 V
0
VGS = 2 V
0.0
0.5
1.0
1.5
2.0
2.5
3.0
VDS - Drain-to-Source Voltage (V)
Output Characteristics
0.20
1
0
0
800
TC = 125 °C
1
2
3
4
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.16
VGS = 4.5 V
0.12
0.08
0.04
VGS = 10 V
0.00
0
4
8
12
16
20
ID - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
ID = 4.1 A
8
6
VDS = 15 V
4
VDS = 24 V
600
Ciss
400
200
Coss
Crss
0
0
5
10
15
20
25
30
VDS - Drain-to-Source Voltage (V)
Capacitance
1.6
VGS = 10 V, ID = 4.1 V
1.4
1.2
VGS = 4.5 V, ID = 4.1 A
1.0
2
0.8
0
0
2
4
6
8
10
12
Qg - Total Gate Charge (nC)
Gate Charge
0.6
- 50 - 25
0 25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
SO9-0131-Rev. B, 02-Feb-09
3
Document Number: 68602
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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