SI3585DV-T1-GE3 View Datasheet(PDF) - VBsemi Electronics Co.,Ltd
Part Name
Description
Manufacturer
SI3585DV-T1-GE3 Datasheet PDF : 10 Pages
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SI3585DV-T1-GE3
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
1
Duty Cycle = 0.5
0.2
0.1
0.1 0.05
0.02
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Single Pulse
0.01
10 - 4
10 - 3
10 - 2
10 - 1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10
8
VGS = 10 V thru 7 V
6V
5
6
5V
4
4
3
4V
2
1
2V
3V
TC = - 55 °C
25 °C
125 °C
0
0
1
2
3
4
5
VDS - Drain-to-Source Voltage (V)
Output Characteristics
0
0
1
2
3
4
5
6
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.2
300
0.1
0.09
0.08
VGS = 4.5 V
0.07
VGS = 10 V
0.06
0.0
0
1
2
3
4
5
6
7
ID - Drain Current (A)
On-Resistance vs. Drain Current
240
Ciss
180
120
Coss
60
Crss
0
0
6
12
18
24
30
VDS - Drain-to-Source Voltage (V)
Capacitance
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5
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