SI3585DV View Datasheet(PDF) - Vaishali Semiconductor
Part Name
Description
Manufacturer
SI3585DV Datasheet PDF : 7 Pages
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Si3585DV
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
N-CHANNEL
Output Characteristics
10
VGS = 4.5 thru 3.5 V
8
3V
6
2.5 V
4
Transfer Characteristics
10
TC = –55_C
8
25_C
6
125_C
4
2
0
0
0.5
2V
1.5 V
1
2
3
4
5
VDS – Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
2
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VGS – Gate-to-Source Voltage (V)
Capacitance
300
0.4
0.3
VGS = 2.5 V
0.2
0.1
VGS = 4.5 V
0.0
0
1
2
3
4
5
6
7
ID – Drain Current (A)
Gate Charge
4.5
VDS = 10 V
3.6
ID = 2.4 A
2.7
1.8
0.9
250
Ciss
200
150
100
50
0
0
Coss
Crss
4
8
12
16
20
VDS – Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.8
1.6
VGS = 4.5 V
ID = 2.4 A
1.4
1.2
1.0
0.8
0.0
0.0
0.5
1.0
1.5
2.0
2.5
Qg – Total Gate Charge (nC)
0.6
–50 –25 0
25 50 75 100 125 150
TJ – Junction Temperature (_C)
Document Number: 71184
S-03512—Rev. B, 04-Apr-01
www.vishay.com
3
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