SI3585DV View Datasheet(PDF) - Vaishali Semiconductor
Part Name
Description
Manufacturer
SI3585DV Datasheet PDF : 7 Pages
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TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
0.2
0.1
0.1 0.05
0.02
Si3585DV
Vishay Siliconix
N-CHANNEL
0.01
10–4
Single Pulse
10–3
10–2
10–1
Square Wave Pulse Duration (sec)
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
10
8
VGS = 4.5 thru 4 V
3.5 V
8
6
3V
6
4
4
2.5 V
1
10
P-CHANNEL
Transfer Characteristics
TC = –55_C
25_C
125_C
2
2V
1.5 V
0
0
1
2
3
4
5
VDS – Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.6
2
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VGS – Gate-to-Source Voltage (V)
Capacitance
450
0.5
VGS = 2.5 V
0.4
0.3
VGS = 3.6 V
0.2
VGS = 4.5 V
0.1
0.0
0
1
2
3
4
5
6
7
ID – Drain Current (A)
Ciss
360
270
180
Coss
90
Crss
0
0
4
8
12
16
20
VDS – Drain-to-Source Voltage (V)
Document Number: 71184
S-03512—Rev. B, 04-Apr-01
www.vishay.com
5
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