SI3585DV View Datasheet(PDF) - Vaishali Semiconductor
Part Name
Description
Manufacturer
SI3585DV Datasheet PDF : 7 Pages
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Si3585DV
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
P-CHANNEL
Gate Charge
4.5
VDS = 10 V
3.6
ID = 2.4 A
2.7
1.8
0.9
0.0
0.0
10
0.6
1.2
1.8
2.4
3.0
Qg – Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
TJ = 150_C
1
TJ = 25_C
0.1
0.00
0.3
0.6
0.9
1.2
1.5
VSD – Source-to-Drain Voltage (V)
Threshold Voltage
0.6
ID = 250 mA
0.4
0.2
0.0
–0.2
On-Resistance vs. Junction Temperature
1.8
1.6
VGS = 10 V
ID = 2.4 A
1.4
1.2
1.0
0.8
0.6
0.4
–50 –25 0
25 50 75 100 125 150
TJ – Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.6
ID = 1.8 A
0.5
ID = 1.2 A
0.4
0.3
0.2
0.1
0.0
0
1
2
3
4
5
VGS – Gate-to-Source Voltage (V)
Single Pulse Power, Junction-to-Ambient
8
6
4
2
–0.4
–50 –25
0 25 50 75 100 125 150
TJ – Temperature (_C)
0
0.01
0.1
1
Time (sec)
10 30
www.vishay.com
6
Document Number: 71184
S-03512—Rev. B, 04-Apr-01
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