SI4413DY-T1-E3 View Datasheet(PDF) - VBsemi Electronics Co.,Ltd
Part Name
Description
Manufacturer
SI4413DY-T1-E3 Datasheet PDF : 9 Pages
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SI4413DY-T1-E3
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
60
5
VGS = 10 V thru 5 V
50
4
40
3
30
VGS = 4 V
2
20
10
VGS = 3 V
0
0
1
2
3
4
5
VDS - Drain-to-Source Voltage (V)
Output Characteristics
0.05
1
0
0
3000
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VGS = 125 °C
VGS = 25 °C
VGS = - 55 °C
1
2
3
4
5
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.04
0.03
VGS = 4.5 V
2400
Ciss
1800
0.02
0.01
VGS = 10 V
0.00
0
10
20
30
40
50
60
ID - Drain Current (A)
On-Resistance vs. Drain Current
10
ID = 10 A
8
VDS = 10 V
VDS = 15 V
6
VDS = 20 V
4
1200
600
Crss
Coss
0
0
1.6
6
12
18
24
30
VDS - Drain-to-Source Voltage (V)
Capacitance
ID = 10 A
1.4
VGS = - 10 V
1.2
VGS = - 4.5 V
1.0
2
0.8
0
0
10
20
30
40
50
Qg - Total Gate Charge (nC)
Gate Charge
0.6
- 50 - 25 0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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