SI4431CDY-T1-E3 View Datasheet(PDF) - VBsemi Electronics Co.,Ltd
Part Name
Description
Manufacturer
SI4431CDY-T1-E3 Datasheet PDF : 9 Pages
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SI4431CDY-T1-E3
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
30
25
20
15
10
5
0
0
0.040
VGS = 10 V thru 4 V
VGS = 3 V
VGS = 2V
1
2
3
4
5
VDS - Drain-to-Source Voltage (V)
Output Characteristics
4.0
3.2
2.4
1.6
0.8
0.0
0.0
1800
0.035
0.030
VGS = 4.5 V
1500
1200
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TC = - 55 °C
TC = 25 °C
TC = 125 °C
0.5
1.0
1.5
2.0
2.5
3.0
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
Ciss
0.025
0.020
VGS = 10 V
0.015
0.010
0
5
10
15
20
25
30
ID - Drain Current (A)
On-Resistance vs. Drain Current
10
ID = 7 A
8
6
4
VDS = 15 V
VDS = 24 V
900
600
300
Coss
Crss
0
0
6
12
18
24
30
VDS - Drain-to-Source Voltage (V)
Capacitance
1.6
VGS = - 10 V, ID = - 5.6 A
1.4
1.2
VGS = - 4.5 V, ID = - 7 A
1.0
2
0.8
0
0
4
8
12
16
20
24
Qg - Total Gate Charge (nC)
Gate Charge
0.6
- 50 - 25 0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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