SI4435DY-T1-E3 View Datasheet(PDF) - VBsemi Electronics Co.,Ltd
Part Name
Description
Manufacturer
SI4435DY-T1-E3 Datasheet PDF : 9 Pages
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SI4435DY-T1-E3
www.VBsemi.tw
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Dynamicb
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
VDS
ΔVDS/TJ
ΔVGS(th)/TJ
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
VGS = 0 V, ID = - 250 µA
ID = - 250 µA
VDS = VGS, ID = - 250 µA
VDS = 0 V, VGS = ± 20 V
VDS = - 30 V, VGS = 0 V
VDS = - 30 V, VGS = 0 V, TJ = 55 °C
VDS ≤ - 5 V, VGS = - 10 V
VGS = - 10 V, ID = - 7.0 A
VGS = - 4.5 V, ID = - 5.6 A
VDS = - 15 V, ID = - 7.0 A
Ciss
Coss
Crss
Qg
VDS = - 15 V, VGS = 0 V, f = 1 MHz
VDS = - 15 V, VGS = - 10 V, ID = - 7.0 A
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Qgs
Qgd
Rg
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
VDS = - 15 V, VGS = - 4.5 V, ID = - 7.0 A
f = 1 MHz
VDD = - 15 V, RL = 2.7 Ω
ID ≅ - 5.6 A, VGEN = - 10 V, Rg = 1 Ω
VDD = - 15 V, RL = 2.7 Ω
ID ≅ - 5.6 A, VGEN = - 4.5 V, Rg = 1 Ω
Drain-Source Body Diode Characteristics
Continous Source-Drain Diode Current
IS
TC = 25 °C
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
IS = - 5.6 A, VGS = 0 V
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
IF = - 5.6 A, dI/dt = 100 A/µs, TJ = 25 °C
Reverse Recovery Rise Time
tb
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Min.
- 30
- 1.0
- 20
0.4
Typ.
- 31
4.5
0.018
0.024
18
1455
180
145
25
13
3.5
5.5
2.0
10
13
23
9
38
89
22
11
- 0.71
22
17
13
9
Max.
Unit
- 2.5
± 100
-1
-5
V
mV/°C
V
nA
µA
A
Ω
S
pF
38
20
nC
4.0
Ω
20
20
35
18
ns
57
134
33
17
- 6.5
A
- 30
- 1.2
V
33
ns
26
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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