SI4463BDY-T1-E3 View Datasheet(PDF) - VBsemi Electronics Co.,Ltd
Part Name
Description
Manufacturer
SI4463BDY-T1-E3 Datasheet PDF : 9 Pages
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SI4463BDY-T1-E3
P-Channel 20-V (D-S) MOSFET
www.VBsemi.tw
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.015 at VGS = - 4.5 V
- 20
0.026 at VGS = - 2.5 V
0.065 at VGS = - 1.8 V
ID (A)
a
- 13
- 10a
-8
Qg (Typ.)
20 nC
SO-8
S1
S2
S3
G4
8D
7D
6D
5D
Top View
S
G
D
P-Channel MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• Built in ESD Protection with Zener Diode
• Typical ESD Performance: 1800 V
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Portable Devices
- Load Switch
- Battery Switch
- Charger Switch
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
TC = 25 °C
TA = 25 °C
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
Limit
- 20
± 12
- 13a
- 10a
- 8b, c
- 7.1b, c
- 50
- 6a
- 2.9b, c
19
12
3.5b, c
2.2b, c
- 55 to 150
260
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, e
Maximum Junction-to-Case (Drain)
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
t≤5s
Steady State
Symbol
RthJA
RthJC
Typical
28
5.3
d. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
e. Maximum under Steady State conditions is 80 °C/W.
Maximum
36
6.5
Unit
V
A
W
°C
Unit
°C/W
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