SI4463BDY-T1-E3 View Datasheet(PDF) - VBsemi Electronics Co.,Ltd
Part Name
Description
Manufacturer
SI4463BDY-T1-E3 Datasheet PDF : 9 Pages
| |||
SI4463BDY-T1-E3
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1.0
10-2
10-3
0.8
10-4
0.6
10-5
0.4
10-6
TJ = 25 °C
10-7
0.2
10-8
0.0
0
3
6
9
12
15
VGS - Gate-to-Source Voltage (V)
Gate Current vs. Gate-Source Voltage
10-9
0
50
10
VGS = 5 V thru 3 V
40
VGS = 2.5 V
8
www.VBsemi.tw
TJ = 150 °C
TJ = 25 °C
3
6
9
12
15
VGS - Gate-to-Source Voltage (V)
Gate Current vs. Gate-Source Voltage
30
6
20
VGS = 2 V
10
0
0.0
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0.00
0
VGS = 1.5 V
0.5
1.0
1.5
2.0
2.5
3.0
VDS - Drain-to-Source Voltage (V)
Output Characteristics
VGS = 1.8 V
VGS = 2.5 V
VGS = 4.5 V
10
20
30
40
50
ID - Drain Current (A)
On-Resistance vs. Drain Current
4
TC = 25 °C
2
TC = 125 °C
0
TC = - 55 °C
0.0
0.5
1.0
1.5
2.0
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
10
ID = - 6 A
8
VDS = 10 V
6
VDS = 5 V
4
VDS = 16 V
2
0
0
10
20
30
40
50
Qg - Total Gate Charge (nC)
Gate Charge
E-mail：China@VBsemi TEL:86-755-83251052
3
Share Link: 